SPECIAL SEMINAR Featuring CHEN Peng
Event Date: 09 Sep 2015 08:00 AM - 09 Sep 2015 09:00 AM
Event Venue: Perseverance Room(CREATE Innovation Wing, Level 5)
Featuring CHEN Peng
Nanjing University, School of Electronic Science and Engineering
WEDNESDAY 9th September 2015, 4:00pm – 5:00pm Perseverance Room
(CREATE Innovation Wing, Level 5)
Title: Nanorods: High efficiency structure for GaN-based lighting device
Nitride nanorods are almost dislocation free and can present excellent optical qualities such as strong PL emission and low threshold stimulated emission. Therefore applying this nanorod or nanocolumn technology to InGaN Multiple Quantum Wells (MQW) may bring about an improvement in photoluminescence quality. In this work, InGaN/GaN MQW embedded in the nanorods were fabricated. The diameters of the nanorods are from 100 nm to 300 nm, and the lengths of the nanorods are from 300 nm to 1400 nm. We measured the photoluminescence (PL) spectra of these samples and then calculated the light emission enhancement. It was found that the light emission of the MQW in the nanorods have been greatly enhanced compared to the planar MQW. PL measurements demonstrated a maximum light emission enhancement factor of more than 10 in the integral intensity. The trend of the PL enhancement factor increment with the nanorod structure were discussed. Higher radiative recombination efficiency in the nanorod structure has great potential to prepare high efficiency optoelectronic devices for future advanced device design.
Wide bandgap semiconductor optoelectronics and devices, Epitaxial growth of compound semiconductors
Dr. CHEN Peng received his PhD degree from Physics Department of Nanjing University in December 2000. He served as Research Scientist and PI in Institute of Materials Research and Engineering, and the PhD supervisor in Department of Electrical Engineering of NUS from 2002 to 2007. Currently he is a professor and PhD supervisor in School of Electronic Science and Engineering, Nanjing University. Dr. CHEN has long been the forefront of innovative research in semiconductor optoelectronic materials and devices, especially for nitride materials and optoelectronic devices, including material epitaxial growth, characterization, device design, chip processing, device applications and lighting project, and achieved a number of leading research results. He received the Chinese research Innovation Award (Individual Award) in 2011. He has published more than 100 research papers, 80 collected by SCI. His 6 international patents have been granted.